specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 april 2010 wja1035 +5v active-bias ingap hbt gain block product features ? cascadable gain block ? 50 ? 4000 mhz ? 15 db gain @ 1.9ghz ? +16.5 dbm p1db @ 1.9ghz ? +35 dbm oip3 @ 1.9ghz ? operates from +5v @ 65ma ? 0.2db gain flatness from 0.3-2.5ghz ? robust 1000v esd, class 1c ? rohs-compliant sot-89 package applications ? wireless infrastructure ? general purpose ? cellular gsm, pcs, umts ? w-cdma , td-scdma , wimax product description the wja1035 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. at 1.9 gh z, the wja1035 typically provides 15 db gain, +35 dbm oip3, and +16.5 dbm p1db. the device is housed in a rohs-compliant sot-89 industry-standard smt package using a nipdau plating to eliminate the possibility of tin whiskering. the wja1035 consists of darlington pair amplifiers using a high reliability ingap/gaas hbt process technology. the mmic amplifier is internally matched to 50 ? and only requires dc-blocking capacitors and a bias inductor for operation. an internal active bias is designed to enable stable performance over temperature. a dropping bias resistor is not required allowing the device to be biased directly from a +5v supply voltage. the broadband amplifier can be directly applied to various current and next generation wireless technologies such as gsm, cdma, w-cdma, wibro, and wimax. the wja1035 is ideal for general purpose applications such as lo buffering, if amplification and pre-driver stages withi n the 50 to 4000 mhz frequency range. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 4000 test frequency mhz 1900 gain db 14.8 input return loss db 13 output return loss db 16 output p1db dbm +16.5 output ip3 (2) dbm +35 output ip2 dbm +46.2 noise figure db 5.8 device voltage v 5 device current ma 65 1. test conditions: 25 oc, supply voltage = +5 v, 50 system. s-parameters and 3oip measured at device pins. all other specifications measured on e valuation board. 2. 3oip measured with two tones at an output power of 3 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 83.8 c / w maximum junction temperature 150 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 500 900 1900 2140 2500 s21 db 14.3 14.3 14.4 14.3 14.1 s11 db -13 -15 -33 -37 -27 s22 db -16 -20 -13 -12 -13 output p1db dbm +18.4 +17.8 +16.5 +16.2 +14.6 output ip3 (2) dbm +35.1 +34.8 +34.2 +33.5 +31.8 output ip2 dbm +50.4 +47 +46.2 +40.1 +37.9 noise figure db 5.2 5.4 5.8 6.0 6.2 3. listed typical performance parameters measured o n evaluation board. ordering information part no. description wja1035 +5v active bias ingap hbt gain block (lead-free/green/rohs-compliant sot-89 package) WJA1035-PCB 50 ? 4000 mhz fully assembled eval. board standard tape / reel size = 1000 pieces on a 7 reel end of life notice last time buy date: oct. 1, 2010 recommended replacement part: tqp3m9008
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 april 2010 wja1035 +5v active-bias ingap hbt gain block typical evaluation board rf performance supply bias = +5 v, i cc = 65 ma gain vs. frequency 6 8 10 12 14 16 0 1000 2000 3000 4000 frequency(mhz) gain(db) -40c +25c +85c return loss t = 25c -35 -30 -25 -20 -15 -10 -5 0 0 1000 2000 3000 4000 frequency(mhz) s11, s22 (db) s11 s22 noise figure vs. frequency 2 3 4 5 6 7 8 9 10 0 1000 2000 3000 4000 frequency (mhz) nf (db) -40c +25c +85c oip3 vs. output power freq = 1900mhz 26 28 30 32 34 36 0 2 4 6 8 10 output power per tone (dbm) oip3 (dbm) oip3 vs. frequency pout = 3 dbm/tone 24 26 28 30 32 34 36 38 0 1000 2000 3000 4000 frequency (mhz) oip3 (dbm) oip3 vs. vcc freq = 1900mhz 26 28 30 32 34 36 4.7 4.8 4.9 5 5.1 5.2 vcc (v) oip3 (dbm) oip2 vs. frequency pout = 3 dbm/tone 30 35 40 45 50 55 0 1000 2000 3000 frequency (mhz) oip2 (dbm) p1db vs frequency 10 12 14 16 18 20 0 1000 2000 3000 4000 frequency (mhz) p1db (dbm) -40c +25c +85c p1db vs. vcc freq = 1900mhz 10 12 14 16 18 20 4.7 4.8 4.9 5.0 5.1 5.2 vcc (v) p1db (dbm) icc vs. temperature vcc = +5v 55 60 65 70 75 -50 -25 0 25 50 75 100 temperature (c) icc (ma) icc vs. vcc 20 40 60 80 100 120 4.0 4.5 5.0 5.5 6.0 vcc (v) icc (ma) -40c +25c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 april 2010 wja1035 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, c5, c6, r3, r5, r6, r7, r8 do not place (3) 1. the listed values are contained on the evaluation b oard to achieve optimal broadband performance 2. for lower cost and performance (500 ? 4000 mhz) opt ion use 18 nh air core wire wound inductor. 3. place holders for the 0 resistors and ?do not place? references are not ne eded for final design. typical device data s-parameters (v device = +5 v, i cc = 65 ma, t = 25 c, calibrated to device leads) freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 -10.16 -61.28 19.40 162.94 -22.46 26.14 -6.89 -4 4.97 50 -12.25 -143.17 15.42 162.78 -19.05 8.34 -13.89 - 116.26 100 -12.41 -162.29 14.78 166.41 -18.88 2.92 -15.89 -143.27 200 -12.44 -173.93 14.53 164.23 -18.76 -1.06 -16.83 -162.44 400 -12.31 178.17 14.57 155.10 -18.72 -6.33 -17.32 -176.16 600 -11.99 173.61 14.55 144.25 -18.73 -11.07 -17.5 9 175.16 800 -11.91 168.46 14.56 133.07 -18.69 -15.21 -17.7 3 171.60 1000 -12.07 160.37 14.66 121.92 -18.64 -19.00 -17. 26 172.75 1200 -12.21 150.24 14.64 109.78 -18.64 -23.18 -16. 98 175.62 1400 -12.11 140.54 14.63 98.22 -18.50 -27.51 -16.7 4 177.93 1600 -12.21 130.99 14.73 85.63 -18.50 -32.33 -16.8 3 177.93 1800 -12.60 123.09 14.82 72.85 -18.37 -36.09 -17.0 3 177.13 2000 -13.91 112.02 14.90 59.92 -18.27 -41.47 -16.5 3 178.93 2200 -16.10 92.29 14.90 46.06 -18.17 -46.53 -15.2 6 179.00 2400 -19.13 58.96 14.77 31.75 -18.18 -51.60 -13.52 179.09 2600 -20.93 11.72 14.63 16.81 -18.14 -57.71 -12.22 177.06 2800 -19.67 -45.91 14.31 2.27 -18.17 -63.91 -11.11 174.24 3000 -15.52 -85.55 13.81 -13.95 -18.23 -69.60 -10.2 0 168.42 3200 -11.92 -108.78 13.21 -28.79 -18.52 -75.78 -9.1 3 161.26 3400 -9.28 -124.42 12.35 -43.88 -18.75 -81.77 -8.22 152.12 3600 -7.55 -139.54 11.39 -58.05 -19.11 -87.00 -7.30 144.80 3800 -6.42 -154.72 10.45 -71.07 -19.31 -91.04 -6.68 140.38 4000 -5.54 -169.61 9.32 -84.12 -19.58 -96.12 -6.44 135.38 device s-parameters are available for download from the website at: http://www.wj.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking capacitor vcc = 5.00v icc = 65 ma wja1035 r1 0 r2 0
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 april 2010 wja1035 +5v active-bias ingap hbt gain block mechanical information this package is lead-free/green/rohs-compliant. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating m aterial on the leads is nipdau. outline drawing land pattern product marking the wja1035 will be marked with an ?a1035? designator with an alphanumeric lot code marked below the part designator. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135?) diameter drill and have a final plat ed thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance . 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / ther mal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. a1035 xxxx-x
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